Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18°
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950448?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Strained InGaAs quantum well lasers with small-divergence angles for high-power pump modules
2. High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers
3. Greene, P.D.: (Euro Patent 0177141)
4. Low-loss laser diode module using a molded aspheric glass lens
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