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Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs

  • Published:1995-02-16 Issue:4 Volume:31 Page:324-326
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:

Author:

Thayne I.G.,Taylor M.R.S.,Cameron N.I.,Holland M.C.,Beaumont S.P.,Elgaid K.,Belle G.,Fairbairn S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etch of gallium nitride and other III-IV materials using a novel high-density plasma configuration;Optoelectronic Materials and Devices II;2000-07-11

2. Low-frequency noise properties of selectively dry etched InP HEMT's;IEEE Transactions on Electron Devices;1998-06

3. Uniform InAlAs/InP HFET fabricated using selective dry recess etching;Materials Science and Engineering: B;1997-02

4. Low excess noise of InAlAs/InP HFETs fabricated using selective dry recess etching;Electronics Letters;1996

5. Investigation of device low frequency noise in 28 GHz MMIC VCO;Proceedings of the 2000 IEEE/EIA International Frequency Control Symposium and Exhibition (Cat. No.00CH37052)
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