90 nm TCAM cell design with leakage suppression technique
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2009.3733?crawler=true&mimetype=application/pdf
Reference3 articles.
1. http://bgp.potaroo.net/
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Leakage TCAM for IP Lookup Using Two-Side Self-Gating;IEEE Transactions on Circuits and Systems I: Regular Papers;2013-06
2. Quaternary 1T-2MTJ Cell Circuit for a High-Density and a High-Throughput Nonvolatile Bit-Serial CAM;2012 IEEE 42nd International Symposium on Multiple-Valued Logic;2012-05
3. Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme;Japanese Journal of Applied Physics;2011-06-20
4. Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme;Japanese Journal of Applied Physics;2011-06-01
5. Decoupled 4T dynamic CAM suitable for high density storage;Electronics Letters;2011
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