GaAs-based 1.53 [micro sign]m GaInNAsSb vertical cavity surface emitting lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2009.1626?crawler=true&mimetype=application/pdf
Reference8 articles.
1. 2.5-mW single-mode operation of 1.55-/spl mu/m buried tunnel junction VCSELs
2. Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD
3. 1.55-μm InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs
4. High temperature continuous-wave operation of 1.3- and 1.55-μm VCSELs with InP/Air-Gap DBRs
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3. Continuous-Wave Operation of GaAs-Based 1.5-μm GaInNAsSb VCSELs;IEEE Photonics Technology Letters;2019-10-15
4. Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range;Semiconductors;2017-09
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