Author:
Xu Y.,Guo Y.,Wu Y.,Xu R.,Yan B.,Lin W.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference11 articles.
1. Quay, R.: ‘Galliun nitride electronics’, (Spinger-Verlag, Berlin 2008)
2. Microwave noise performances of AlGaN∕GaN HEMTs on semi-insulating 6H-SiC substrates
3. Noise model of gate-leakage current in ultrathin oxide MOSFETs
4. Sanabria, C.: ‘Noise of AlGaN/GaN HEMTs and oscillators’, June, 2006, Ph.D., University of California, Santa Barbara, USA
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