Thermally stable optical bistability in an InGaAs/InGaAlAs etalon at 1.5 μm wavelength-Reference-Cited by-同舟云学术

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Thermally stable optical bistability in an InGaAs/InGaAlAs etalon at 1.5 μm wavelength

Published:1993 Issue:15 Volume:29 Page:1374
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Neilson D.T.,Ehrlich J.E.,Walker A.C.,Dann A.J.,Fisher M.A.,Salter M.A.,Reid I.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19930920?crawler=true&mimetype=application/pdf

Reference10 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Power insensitive surface-normal electroabsorption modulators;Optics Letters;2020-08-07

2. 290fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55μm range;Applied Physics Letters;2004-12-13

3. Nonlinear optical and bistable properties of a wafer-fused vertical-cavity device based on InGaAsP;Optics Communications;1997-01

4. Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength;IEEE Photonics Technology Letters;1996-04

5. Growth of an InGaAs/Alingaas Mqw Non-Linear Etalon with Integrated 1.5μm GaInAsP/InP Epitaxial BRAGG Reflector;MRS Proceedings;1993-01

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