High-temperature operation of 637 nm AlGaInP MQW laser diodes with quaternary QWs grown on misoriented substrates-Reference-Cited by-同舟云学术

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High-temperature operation of 637 nm AlGaInP MQW laser diodes with quaternary QWs grown on misoriented substrates

Published:1993-01-07 Issue:1 Volume:29 Page:24-26
ISSN:1350-911X
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Tanaka T.,Yanagisawa H.,Yano S.,Minagawa S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19930016?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Sources;Handbook of Fiber Optic Data Communication;2008

2. Optical Sources;Handbook of Fiber Optic Data Communication;2002

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