1/f noise and interface trap density in high field stressed pMOS transistors-Reference-Cited by-同舟云学术

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1/f noise and interface trap density in high field stressed pMOS transistors

Published:1993 Issue:8 Volume:29 Page:696
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Todsen J.L.,Augier P.,Schrimpf R.D.,Galloway K.F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19930466?crawler=true&mimetype=application/pdf

Reference10 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. $1/f$ Noise and Defects in Microelectronic Materials and Devices;IEEE Transactions on Nuclear Science;2015-08

2. Reliability aspects of the low-frequency noise behaviour of submicron CMOS technologies;Semiconductor Science and Technology;1999-01-01

3. Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs;Solid-State Electronics;1998-03

4. The impact of oxide degradation on the low frequency ( ) noise behaviour of P channel mosfets;Microelectronics Reliability;1996-11

5. Evidence for border traps in metal‐oxide‐semiconductor transistors through 1/f noise;Applied Physics Letters;1995-07-31

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