Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes-Reference-Cited by-同舟云学术

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Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes

Published:1993 Issue:15 Volume:29 Page:1314
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Tai K.,Huang K.F.,Wu C.C.,Wynn J.D.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19930881?crawler=true&mimetype=application/pdf

Reference7 articles.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode;Materials;2017-07-28

2. Advances in red-emitting VCSELs for polymer fiber applications;SPIE Proceedings;2004-06-16

3. Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs;Applied Physics Letters;1998-08-24

4. Visible (683 to 713 nm) room-temperature AlGaAs vertical cavity surface emitting lasers (VCSELs);Journal of Crystal Growth;1997-01

5. Room temperature visible (683-713 nm) all-AlGaAs vertical-cavity surface-emitting lasers (VCSELs);IEEE Photonics Technology Letters;1996-04

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