High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19930165?crawler=true&mimetype=application/pdf
Reference6 articles.
1. High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers;Japanese Journal of Applied Physics;2009-04-20
2. High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers;Applied Physics Letters;1998-08-31
3. Metalorganic vapor phase epitaxy growth of InGaP using tertiarybutylphosphine and its application to selective regrowth of current blocking layers of laser diodes;Journal of Crystal Growth;1994-12
4. High power 980 nm nonabsorbing facet lasers;Electronics Letters;1994-10-13
5. InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum-well lasers for high-power operation at 0.98 mu m;IEEE Photonics Technology Letters;1993-09
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