Impact of Al content on InAs/AlSb/Al x Ga 1− x Sb tunnelling diode-Reference-Cited by-同舟云学术

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Impact of Al content on InAs/AlSb/Al x Ga 1− x Sb tunnelling diode

Published:2017-07 Issue:7 Volume:2017 Page:403-406
ISSN:2051-3305
Container-title:The Journal of Engineering
language:en
Short-container-title:J. eng.

Author:

Zeng Yuping¹²,Hsu Chingyi²³,Chang Edward Yi³,Hu Chenming²

Affiliation:

1. Department of Electrical and Computer EngineeringUniversity of DelawareNewarkDE 19716USA

2. Department of Electrical Engineering and Computer ScienceUniversity of CaliforniaBerkeleyCA 94720USA

3. Department of Electronics EngineeringNational Chiao Tung UniversityHsinchu 30010Taiwan

Funder

University of Delaware

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering,Energy Engineering and Power Technology,Software

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/joe.2017.0248

Reference16 articles.

1. High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

2. Bistable gated bipolar device

3. A comprehensive study of bistable gated bipolar device

4. LingJ.:University of Rochester. Available athttp://www.ece.rochester.edu/courses/ECE423/ECE223_423_MSC426%20Workshop06/term%20papers%2006/Ling_06.pdf accessed April 2017

5. Negative Differential Resistance Circuit Design and Memory Applications

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