Tunable linearity enhancement for 180 nm complementary metal–oxide–semiconductor LNA with active feedback
Author:
Affiliation:
1. Department of Electrical EngineeringBaghdad UniversityBaghdadIraq
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering,Energy Engineering and Power Technology,Software
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/joe.2017.0067
Reference27 articles.
1. A high linearity wideband common‐gate LNA with differential active inductor;Ma L.;IEEE Trans. Circuits Syst. II, Express Briefs,2016
2. ChengG. LiZ. LuoL.et al.: ‘A 2–3 GHz high gain and high linearity current‐reused LNA with wideband input matching’.2016 Int. Conf. on Communication Problem‐Solving (ICCP) 2016 pp.1–2
3. VargaG. HeisingC.P. AshokA.et al.: ‘A highly linear broadband LNA for TV white spaces and cognitive radio applications’.2015 German Microwave Conf. 2015 pp.296–298
4. WangY. YangL. LinF.: ‘A 0.2–5 GHz LNA with linearity enhancement using double capacitive cross‐coupling technique’.2015 Asia‐Pacific Microwave Conf. (APMC) 2015 vol.2 pp.1–3
5. RajashekharaiahM. UpadhyayaP. HeoD.: ‘EnhancedGm3cancellation for linearity improvement in CMOS LNAs’.2006 IEEE Int. Symp. on Circuits and Systems 2006 pp.4240–4243
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