Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs-Reference-Cited by-同舟云学术

Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs

Published:2022-08-22 Issue:2 Volume:16 Page:333-345
ISSN:1755-4535
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Jingwei Zhang¹^ORCID,Qiang Wang¹^ORCID,Weifeng Zhang¹,Guojun Tan¹

Affiliation:

1. School of Electrical Engineering China University of Mining and Technology Xuzhou China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12374

Reference39 articles.

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2. In‐situ health monitoring of IGBT modules of an on‐line medium‐voltage inverter system using for industrial Internet of things;Ma M.;CSEE J. Power Energy Syst.,2020

3. Effect of Asymmetric Layout of IGBT Modules on Reliability of Motor Drive Inverters

4. Prediction of bond wire fatigue of IGBTs in a PV inverter under a long‐term operation;Reigosa P.D.;IEEE Trans. Power Electron.,2016

5. An Online Data-Driven Method for Simultaneous Diagnosis of IGBT and Current Sensor Fault of Three-Phase PWM Inverter in Induction Motor Drives

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