10-stage,‘cascaded’ InAsSb quantum well laser at 3.9 [micro sign]m
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980304?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Quantum Cascade Laser
2. Type-II and type-I interband cascade lasers
3. InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
4. High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature
5. Type-II interband quantum cascade laser at 3.8 [micro sign]m
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2. Mode behavior in InAs midinfrared whispering gallery lasers;Applied Physics Letters;2007-01
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