Modelling of wire resistance effect in PCM‐based nanocrossbar memory
Author:
Affiliation:
1. Faculty of EngineeringThe University of NottinghamKuala LumpurMalaysia
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering,Energy Engineering and Power Technology,Software
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/joe.2016.0212
Reference19 articles.
1. El‐HassanN.H. KumarT.N. AlmuribH.A.F.: ‘Improved SPICE model for phase change memory cell’.Proc. Int. Conf. Intelligent and Advanced Systems pp.2–7
2. QureshiM.K. SrinivasanV. RiversJ.A.: ‘Scalable high performance main memory system using phase‐change memory technology’.Proc. 36th Annual Int. Symp. Computer Architecture – ISCA ‘09 2009 vol.37 no.3 p.24
3. DongM. ZhongL.: ‘Challenges to crossbar integration of nanoscale two‐terminal symmetric memory devices’.Proc. Int. Conf. Nanotechnology IEEE‐NANO 2008 pp.692–694
4. ChenA.: ‘Accessibility of nano‐crossbar arrays of resistive switching devices’.Proc. IEEE Conf. Nanotechnology 2011 no.3 pp.1767–1771
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