Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20071889?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Self-Aligning Planarization and Passivation for Integration Applications in III–V Semiconductor Devices
2. GaAs∕polymer optical nanowires: fabrication and characterisation
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