50 nm In0.8GaP/In0.4AlAs/In0.35GaAs metamorphic HEMTs with ZEP/UV5 bilayer T-gate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20071551?crawler=true&mimetype=application/pdf
Reference7 articles.
1. High-performance 0.1-/spl mu/m In/sub 0.4/AlAs/In/sub 0.35/GaAs MHEMTs with Ar plasma treatment
2. Novel high-yield trilayer resist process for 0.1 μm T-gate fabrication
3. A novel electron-beam exposure technique for 0.1-μm T-shaped gate fabrication
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2. Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors;IEEE Transactions on Electron Devices;2011-06
3. A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In0.88GaP/In0.4AlAs/In0.4GaAs mHEMTs;Journal of electromagnetic engineering and science;2009-12-31
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