Ion-implanted E/D-type GaAs IC technology
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19810660?crawler=true&mimetype=application/pdf
Reference3 articles.
1. Ogawa, M., and Ishikawa, M.: ‘Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection’, (3 994 758)
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2. Chapter 3 Device Fabrication Process Technology;Semiconductors and Semimetals;1990
3. Chapter 1 Active Layer Formation by Ion Implantation;Semiconductors and Semimetals;1990
4. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Characterization of residual carbon in semi‐insulating GaAs;Journal of Applied Physics;1988-12
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