Single-interface enhanced mobility structures by metalorganic chemical vapour deposition
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19810426?crawler=true&mimetype=application/pdf
Reference11 articles.
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Early history of MOVPE reactor development;Journal of Crystal Growth;2019-01
3. Chapter 3 Metalorganic Vapor Phase Epitaxy for High-Quality Active Layers;Very High Speed Integrated Circuits: Heterostructure;1990
4. Metalorganic Chemical Vapor Deposition of Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Metalorganic chemical vapor deposition;Critical Reviews in Solid State and Materials Sciences;1988-01
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