Current drifting behaviour in InP MISFET with thermally oxidised InP/InP interface
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19810658?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Nishimatsu, S., Tokuyama, T., and Matsushita, M.: ‘Characteristics of metal/alumina/silicon dioxide/silicon (MAOS) system’, Vratny, F., Thin film dielectrics, (The Electrochemical Society 1969), p. 338–354
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