Properties of inverted rib-waveguide lasers operating at 1.3 μm wavelength-Reference-Cited by-同舟云学术

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Properties of inverted rib-waveguide lasers operating at 1.3 μm wavelength

Published:1981 Issue:23 Volume:17 Page:868
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Turley S.E.H.,Henshall G.D.,Greene P.D.,Knight V.P.,Moule D.M.,Wheeler S.A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19810606?crawler=true&mimetype=application/pdf

Reference4 articles.

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Some observations from interrupted lifetest of GaInAsP/InP inverted-rib laser diodes;Journal of Electronic Testing;1995-02

2. Degradation recovery in 1.3 μm GaInAsP-InP inverted-rib laser diodes;Microelectronic Engineering;1994-12

3. Observation of degradation relaxation in 1.3 μm GaInAsP laser diodes;Microelectronics Reliability;1994-04

4. Laser Structures and Their Performance;Semiconductor Lasers;1993

5. Observation of nonbiased degradation recovery in GaInAsP/InP laser diodes;Journal of Lightwave Technology;1992

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