A four‐step control for IGBT switching improvement using an active voltage gate driver
Author:
Affiliation:
1. School of Electrical Engineering Dalian University of Technology Dalian China
2. School of Engineering University of Leicester Leicester UK
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12248
Reference30 articles.
1. Comparison of 4.5-kV Press-Pack IGBTs and IGCTs for Medium-Voltage Converters
2. Multilevel Voltage-Source-Converter Topologies for Industrial Medium-Voltage Drives
3. A 6.7‐GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI;Dymond H.;IEEE Trans. Ind. Electro,2018
4. Jalakas T. Molder H. Egorov M. et al.:EMI reduction problems in power converters with 6.5 kV IGBTs.2008 Power Quality and Supply Reliability Conference pp.229–233 August (2008)
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