Review of the designs in low inductance SiC half‐bridge packaging-Reference-Cited by-同舟云学术

Review of the designs in low inductance SiC half‐bridge packaging

Published:2022-04-12 Issue:11 Volume:15 Page:989-1003
ISSN:1755-4535
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Ma Haohao¹^ORCID,Yang Yuan¹,Wu Lei¹,Wen Yang¹,Li Qiang¹

Affiliation:

1. Department of automation and Information Engineering Xi'an University of Technology Jinhua South Road no. 5 Xi'an China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12290

Reference85 articles.

1. Statistical Review of World Energy 2020:https://www.bp.com/en/global/corporate/energy‐economics/statistical‐review‐of‐world‐energy.html.bp‐stats‐review‐2020‐electricity.pdf(2021)

2. International Energy Agency: World Energy Outlook 2020.https://www.iea.org/reports/world‐energy‐outlook‐2020/outlook‐for‐electricity#abstract(2020)

3. Barater D. Buticchi G. Concari C. Franceschini G. Gurpinar E. De D. Castellazzi A.:Performance analysis of UniTL‐H6 inverter with SiC MOSFETs. In:2014 International Power Electronics Conference (IPEC‐Hiroshima 2014 ‐ ECCE ASIA) pp.433–439. Hiroshima Japan (2014)

4. Evaluation of SiC BJTs for High-Power DC–DC Converters

5. An SiC-Based Half-Bridge Module With an Improved Hybrid Packaging Method for High Power Density Applications

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