Reliability and performance of optimised Schmitt trigger gates

Author:

Tache Mihai12,Ibrahim Walid3,Kharbash Fekri3,Beiu Valeriu1

Affiliation:

1. Department of Mathematics and Computer ScienceFaculty of Exact SciencesAurel Vlaicu University of AradRomania

2. University Politehnica of BucharestRomania

3. Department of Computer and Network EngineeringCollege of Information TechnologyUnited Arab Emirates UniversityUnited Arab Emirates

Funder

United Arab Emirates University

Semiconductor Research Corporation

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering,Energy Engineering and Power Technology,Software

Reference73 articles.

1. HagiwaraT. YamaguchiK. ShojiroA.: ‘Threshold voltage deviation in very small MOS transistors due to local impurity fluctuations’.Proc. Int. Symp. VLSI Technology (VLSIT'82) Oiso Japan pp.46–47

2. Random dopant induced threshold voltage lowering and fluctuations in sub‐0.1µm MOSFET's: a 3‐D ‘atomistic’ simulation study;Asenov A.;IEEE Trans. Electr. Dev.,1998

3. Simulation of intrinsic parameter fluctuations in decanometer and nanometer‐scale MOSFETs;Asenov A.;IEEE Trans. Electr. Dev.,2003

4. AsenovA.: ‘Statistical device variability and its impact on design’.IEEE Int. Symp. Asynchronous Circuits and Systems Newcastle UK Apr. 2008 pp.xv–xvi

5. Intl. Tech. Roadmap for Semiconductors (ITRS) 2.0 SEMATECH Albany NY USA 2015. Available athttp://www.itrs2.net/

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