Study on silicon drift detector efficiency using Monte–Carlo simulation and experimental methods

Author:

Guo Siming1,Wu Jinjie1,Zhang Jian1,Fan Zihao1,Che Weina1,Li Mengshi1,Hou Dongjie1,Wang Ji1

Affiliation:

1. National Institute of MetrologyBeijingPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering,Energy Engineering and Power Technology,Software

Reference15 articles.

1. Simulation of energy spectrum of GEM detector from an X‐ray quantum;Malinowski K.;J. Instrum.,2018

2. Calculation of spectrum to dose conversion function of portable HPGe γ spectrometer;Li H.B.;Hedianzixue Yu Tance Jishu/nuclear Electron. Detect. Technol.,2013

3. The fluence spectrum allowing the formation of a connected buried layer in silicon by oxygen implantation;Cerofolini G.F.;Semicond. Sci. Technol.,1996

4. ‘Silicon drift detectors for high resolution room temperature X‐ray spectroscopy;Lechner P.;Nucl. Instrum. Methods Phys. Res.,1996

5. GuadillaV. TaínJ.L. AgramuntJ.et al.: ‘Calibration of a DSSSD detector with radioactive sources’.American Institute of Physics La Rábida Spain 2013 pp.173–174

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