Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor-Reference-Cited by-同舟云学术

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Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor

Published:2000-06-01 Issue:3 Volume:147 Page:188-192
ISSN:1350-2433
Container-title:IEE Proceedings - Optoelectronics
language:en
Short-container-title:

Author:

Agert C.,Bett A.W.,Sulima O.V.,Lanyi P.,Stolz W.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Atomic and Molecular Physics, and Optics

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20000415?crawler=true&mimetype=application/pdf

Reference12 articles.

1. InGaAsSb thermophotovoltaic diode: Physics evaluation

2. C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-V and Related Semiconductor Materials;The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities;2011-03-30

2. Tandem cells for very high concentration;Next Generation Photovoltaics;2003-09

3. Growth of Sb-based materials by MOVPE;Journal of Crystal Growth;2003-02

4. Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE;Semiconductor Science and Technology;2001-12-19

5. MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactor;Journal of Crystal Growth;2001-05

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