730 nm InAlGaAs SQW laser diodes grown by MOVPE using `ether-free' and conventional `solution' trimethylindium
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Atomic and Molecular Physics, and Optics
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20000195?crawler=true&mimetype=application/pdf
Reference8 articles.
1. 730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells
2. High-power InAlGaAs-GaAs laser diode emitting near 731 nm
3. 7W CW power from tensile-strained GaAsyP1-y/AlGaAs ( = 735 nm) QW diode lasers
4. Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m
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