Gain-switching of GaInN multiquantum well laser diodes-Reference-Cited by-同舟云学术

Gain-switching of GaInN multiquantum well laser diodes

Published:2000 Issue:1 Volume:36 Page:83
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Marinelli C.,Khrushchev I.Y.,Rorison J.M.,Penty R.V.,White I.H.,Kaneko Y.,Watanabe S.,Yamada N.,Takeuchi T.,Amano H.,Akasaki I.,Hasnain G.,Schneider R.,Wang S.-Y.,Tan M.R.T.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20000130?crawler=true&mimetype=application/pdf

Reference4 articles.

1. 20‐GHz bandwidth GaAs photodiode

2. Measurement of 1.3 and 1.55 μm gain-switched semiconductor laser pulses with a picosecond IR streak camera and a high-speed InGaAs PIN photodiode

3. Vasil'ev, P.: ‘Ultrafast diode lasers. Fundamentals and applications’, (Artech House Publishers Boston-London 1985), p. 55–62 and references therein

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