Improvement of -SiC/Si pn diode high temperature characteristics with porous silicon layer-Reference-Cited by-同舟云学术

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Improvement of -SiC/Si pn diode high temperature characteristics with porous silicon layer

Published:2000 Issue:1 Volume:36 Page:86
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Hsieh Wen-Tse,Fang Yean-Kuen,Lee W.J.,Ho Chi-Wei,Wu Kuen-Hsien,Ho Jyh-Jier,Hwang Jun-Dar

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20000019?crawler=true&mimetype=application/pdf

Reference3 articles.

1. Harris, L.: ‘Properties of silicon carbide’, (IEE INSPEC New York 1981)

2. Epitaxial Growth and Electrical Characteristics of β -SiC on Si by Low-Pressure Rapid Thermal Chemical Vapor Deposition

3. Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features and mechanisms of growth of cubic silicon carbide films on silicon;Physics of the Solid State;2012-04

2. Morphology of heteroepitaxial β-SiC films grown on Si(111) through high-vacuum chemical vapor deposition from hexane vapors;Physics of the Solid State;2007-04

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