Affiliation:
1. Key Laboratory of the Ministry of Education for Wide Band‐Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian UniversityNo. 2 South TaiBai RoadXi‘an710071ShaanxiPeople's Republic of China
Funder
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering
Reference12 articles.
1. ChenX.B.: ‘Breakthrough to the ‘silicon limit’ of power devices’.Proc. 1998 Fifth Int. Conf. Solid‐State and Integrated Circuit Technology Beijing China October1998 pp.141–144 doi:
2. Optimization of the specific on-resistance of the COOLMOS/sup TM/
3. Successfully Controlled Potential Distribution in a Novel High-Voltage and High-Frequency SOI MESFET
4. ShenoyP.M.BhallaA.DolnyG.M.: ‘Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET’.1999 Proc. 11th Int. Symp. Power Semiconductor Devices and ICs (ISPSD’99) Toronto Ontario Canada 1999 pp.99–102 doi:
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