PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance-Reference-Cited by-同舟云学术

PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

Published:2018-11 Issue:11 Volume:13 Page:1531-1536
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Meng Ying¹²³,Wang Jiawei¹²,Ming Anjie¹²,Wang Yinghui¹²³,Shi Xuewen¹²,Li Molin⁴,Wang Weibing¹²,Li Ling¹²

Affiliation:

1. Department of MicroelectronicsUniversity of Chinese Academy of SciencesBeijing100029People's Republic of China

2. Institute of Microelectronics Chinese Academy of SciencesBeijing100029People's Republic of China

3. Kunshan BranchInstitute of Microelectronics Chinese Academy of SciencesKunshanJiangsu215347People's Republic of China

4. National Center for Nanoscience and TechnologyBeijing100190People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5249

Reference28 articles.

1. Wearable and sensitive heart-rate detectors based on PbS quantum dot and multiwalled carbon nanotube blend film

2. SomeyaT.IbaS.KatoY.et al.: ‘A large‐area flexible and lightweight sheet image scanner integrated with organic field‐effect transistors and organic photodiodes’.50th IEEE International Electron Devices Meeting San Francisco CA USA 2004 pp.365–368

4. ChuangC.S.FungT.C.MullinsB.G.et al.: ‘Photosensitivity of amorphous IGZO TFTs for active‐matrix flat‐panel displays’.International Symposium of the Society‐for‐Information‐Display Los Angeles CA USA 2008 pp.1215–1218