High power and linearity performances of gallium nitride HEMT devices on sapphire substrate-Reference-Cited by-同舟云学术

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High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Published:2005 Issue:1 Volume:41 Page:46
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Werquin M.,Gaquiére C.,Guhel Y.,Vellas N.,Theron D.,Boudart B.,Hoel V.,Germain M.,De Jaeger J.C.,Delage S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20056735?crawler=true&mimetype=application/pdf

Reference7 articles.

1. 30-W/mm GaN HEMTs by Field Plate Optimization

2. 12 W∕mm power density AlGaN∕GaN HEMTs on sapphire substrate

3. Static measurements of GaN MESFETs on (111) Si substrates

4. Load impedance influence on the I/sub D/(Y/sub DS/) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices;Journal of Sensors;2022-09-22

2. Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates;Journal of Nanoscience and Nanotechnology;2013-10-01

3. Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor;Transactions on Electrical and Electronic Materials;2013-02-25

4. A novel method for the fabrication of AlGaN/GaN HEMTs on Si (111) substrates;The International Journal of Advanced Manufacturing Technology;2012-11-14

5. A Comparative Optimization of Electrical Properties and Surface Morphology of Ti/Al/Ta/Au Ohmic Contacts in AlGaN/GaN HEMTs on Si(111), Sapphire, 4H-SiC Substrates;Advanced Materials Research;2012-06

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