Refractory self-aligned gate technology for GaAs microwave FETs and MMICS-Reference-Cited by-同舟云学术

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Refractory self-aligned gate technology for GaAs microwave FETs and MMICS

Published:1987 Issue:20 Volume:23 Page:1073
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Geissberger A.E.,Sadler R.A.,Griffin E.L.,Bahl I.J.,Balzan M.L.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19870750?crawler=true&mimetype=application/pdf

Reference2 articles.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.6 W K-band MMIC power amplifier developed using low loss matching technique for point-to-point radio applications;Microwave and Optical Technology Letters;2007

2. Novel WSi/Au T-shaped gate GaAs metal–semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05

3. Phased-Array Radar;Gallium Arsenide IC Applications Handbook;1995

4. MMIC Technology Overview;Gallium Arsenide IC Applications Handbook;1995

5. Low-noise gaas MESFET optimization using an orthogonal array approach;International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering;1994-10

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