Pressure dependence of threshold current and carrier lifetime in 1.55 μm GaInAsP lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19870357?crawler=true&mimetype=application/pdf
Reference15 articles.
1. Horikoshi, Y.: ‘Temperature dependence of laser threshold current’, Pearsall, T.P., GaInAsP alloy semiconductors, (J. Wiley & Sons, New York/London 1982),Chap. 15,
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1. Amplified spontaneous emission measurements in a diamond anvil cell: A tool to investigate laser diode gain under high pressure;physica status solidi (b);2004-11
2. Optical properties of semiconductor lasers with hydrostatic pressure;Journal of Applied Physics;1993-07
3. Active layer assessment of AlxGa1-xAsySb1-y/GaSb diode lasers from hydrostatic pressure measurements;Semiconductor Science and Technology;1990-08-01
4. Scanning the laser gain spectrum using distributed feedback and hydrostatic pressure;Electronics Letters;1987-05-21
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