CMOS/SIMOX devices having a radiation hardness of 2 Mrad(Si)
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19870099?crawler=true&mimetype=application/pdf
Reference3 articles.
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Radiation effects and hardening of electronic components and systems: an overview;Indian Journal of Physics;2023-03-26
2. Microscopic observation of lateral diffusion at Si–SiO2 interface by photoelectron emission microscopy using synchrotron radiation;Applied Surface Science;2011-11
3. Degradation of MOSFETs on SIMOX by irradiation;Journal of Radioanalytical and Nuclear Chemistry;1999-02
4. Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate;MRS Proceedings;1997
5. Silicon epitaxial growth on silicon‐on‐insulator structures by rapid thermal processing chemical vapor deposition;Applied Physics Letters;1990-12-03
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