Development of gate-lag effect on GaAs power MESFETs during aging-Reference-Cited by-同舟云学术

Development of gate-lag effect on GaAs power MESFETs during aging

Published:1987 Issue:4 Volume:23 Page:139
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Dumas J.-M.,Garat F.,Lecrosnier D.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19870098?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Davey, J.E., and Christou, A.: ‘Reliability and degradation of III-V semiconductor devices’, Howes, M.J., Morgan, D.V., Reliability and degradation, (Wiley, UK 1981),Chap. 5, p. 237–300

2. Irvin, J.C.: ‘The reliability of GaAs FETs’, di Lorenzo, J.V., Khandelwal, D.D., GaAs FET principles and technology, (Artech House, Dedham, MA 1982),Chap. 6, p. 349–400

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