Dry etch gate recess high breakdown voltage power P-HEMTs-Reference-Cited by-同舟云学术

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Dry etch gate recess high breakdown voltage power P-HEMTs

Published:1994-10-13 Issue:21 Volume:30 Page:1803-1805
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Wu C.S.,Pao C.K.,Pearton S.J.,Ren F.,Wang R.F.,Hu M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19941235?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Chao, P.C., Swanson, A., Brown, A.S., Mishra, U., Ali, F., and Yuen, C.: ‘HEMTs and HBTs: Devices, fabrication and circuits’, Ali, F., Gupta, A., (Artech House, Boston 1991),3, p. 77–190

2. 0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology

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1. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19

2. Modulation Doped FETs;Encyclopedia of RF and Microwave Engineering;2005-04-15

3. Off-State Breakdown of GaAs PHEMTs: Review and New Data;IEEE Transactions on Device and Materials Reliability;2004-03

4. Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs;Solid-State Electronics;2002-09

5. Comparison of the effects of deuterated SiNX films on GaN and GaAs rectifiers;Solid-State Electronics;2002-09

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