6% external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs-Reference-Cited by-同舟云学术

6% external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs

Published:1994-10-13 Issue:21 Volume:30 Page:1787-1789
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Blondelle J.,De Neve H.,Van Daele P.,Baets R.,Demeester P.,Borghs G.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19941216?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nm

2. Resonant cavity light emitting diode and detector using epitaxial liftoff

3. Microcavity enhanced vertical‐cavity light‐emitting diodes

4. H. De Neve, J. Blondelle, R. Baets, P. Demeester, P. Van Daele, G. Borghs, ‘High efficiency planar microcavity LED's: comparison of design and experiment’. To be published

5. Highly Efficient Light-Emitting Diodes with Microcavities

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4. Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes;Applied Physics Letters;1999-06-14

5. Impact of planar microcavity effects on light extraction-Part II: selected exact simulations and role of photon recycling;IEEE Journal of Quantum Electronics;1998