Reset-set flipflop based on a novel approach of modulating resonant-tunnelling current with FET gates
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941194?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor
2. Monolithic integration of InGaAs/InAlAs resonant tunneling diode and HEMT for single-transistor cell SRAM application
3. Co-integration of resonant tunneling and double heterojunction bipolar transistors on InP
4. An investigation of i-AlGaAs/n-GaAs doped-channel MIS-like FET's (DMT's)—Properties and performance potentialities
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