Calculation of shift of avalanche transit time phase delay due to optically injected carriers in indium phosphide avalanche diodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941158?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Single-drift flat-profile GaAs impatt diodes at 90 GHz
2. The effect of hole versus electron photocurrent on microwave—Optical interactions in IMPATT oscillators
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1. Optical control of large-signal properties of millimeter-wave and sub-millimeter-wave DDR Si IMPATTs;Journal of Computational Electronics;2013-12-28
2. Optically—Controlled InP Based Quasi-Read ATT Diode— A Novel Device at MM-Wave Window Frequency For High-Power Generation;AIP Conference Proceedings;2011
3. Millimeter wave properties of photo-illuminated Double Drift indium phosphide IMPATTs at elevated temperature;2008 International Conference on Microwave and Millimeter Wave Technology;2008-04
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