All-epitaxial current- and mode-confined AlGaAs∕GaAs VCSEL
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20046159?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Index guiding dependent effects in implant and oxide confined vertical-cavity lasers
2. Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
3. Implant-apertured and index-guided vertical-cavity surface-emitting lasers (I2-VCSELs)
4. Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency
5. InGaAs‐GaAs quantum well vertical‐cavity surface‐emitting laser using molecular beam epitaxial regrowth
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1. Sacrificial Al[sub 0.8]Ga[sub 0.2]As etching for microstructures in integrated optoelectronic devices;Journal of Applied Physics;2006
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