1.53 μm DFB laser on semi-insulating InP substrate with very low threshold current
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19900609?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates;Chinese Physics Letters;2009-05
2. Threshold currents of 1.3-μm bulk, 1.55-μm bulk, and 1.55-μm MQW DFB P-substrate partially inverted buried heterostructure laser diodes;IEEE Journal of Quantum Electronics;1998-03
3. Synthesis, Langmuir−Blodgett Film, and Second-Order Nonlinear Optical Property of a Novel Asymmetrically Substituted Metal-Free Phthalocyanine;Langmuir;1998-01-16
4. The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substrates;Journal of Electronic Materials;1995-11
5. Surface emitting InGaAsP/InP distributed feedback laser diode at 1.53 mu m with monolithic integrated microlens;IEEE Photonics Technology Letters;1991-09
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