Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off-Reference-Cited by-同舟云学术

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Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

Published:1990 Issue:13 Volume:26 Page:925
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Polentier I.,Buydens L.,Ackaert A.,Demeester P.,van Daele P.,Depestel F.,Lootens D.,Baets R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19900604?crawler=true&mimetype=application/pdf

Reference4 articles.

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2. Structural and optical changes in GaAs irradiated with 100 keV and 2 MeV protons;Journal of Physics D: Applied Physics;2022-05-11

3. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation;Nanomaterials;2020-02-17

4. Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices;Nature Electronics;2019-10

5. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors;Optics Express;2014-10-01

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