Effect of barrier width on performance of long wavelength GainAs/InP multi-quantum-well lasers-Reference-Cited by-同舟云学术

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Effect of barrier width on performance of long wavelength GainAs/InP multi-quantum-well lasers

Published:1988 Issue:14 Volume:24 Page:859
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Williams P.J.,Robbins D.J.,Cush R.,Scott M.D.,Davies J.I.,Marshall A.C.,Riffat J.,Carter A.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19880585?crawler=true&mimetype=application/pdf

Reference6 articles.

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers;MRS Proceedings;2000

2. High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor deposition;Journal of Crystal Growth;1994-12

3. 1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1992-05-15

4. MOVPE in GaInAsP systems for opto-electronic applications;Microelectronic Engineering;1992-05

5. Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP;Journal of Electronic Materials;1991-12

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