Characteristics of separated-gate JFETs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19860853?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Das, C.: ‘Realizatie en modelleren van ionen-geimplanteerde junktie-veldeffekttransistoren in kompatibele processen’, 1984, Thesis, Katholieke Universiteit, Leuven, Belgium
2. Sze, S.M.: Physics of semiconductor devices, 2nd edn(Wiley 1981)
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical model for I-V characteristics of JFETs with heavily doped channels;Solid-State Electronics;1990-01
2. I–V characteristics of integrated n+pn− reachthrough diodes;Solid-State Electronics;1989-08
3. Design considerations for integrated high-frequency p-channel JFETs;IEEE Transactions on Electron Devices;1988-11
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