Promotion of practical SIMOX technology by the development of a 100 mA-class high-current oxygen implanter
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19860532?crawler=true&mimetype=application/pdf
Reference3 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. History of Low-Voltage and Low-Power Devices;MOS Devices for Low-Voltage and Low-Energy Applications;2016-12-02
2. Demonstration of 100 nm Gate SOI CMOS with a Thin Buried Oxide Layer and its Impact on Device Technology;MOS Devices for Low-Voltage and Low-Energy Applications;2016-12-02
3. 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer;IEEE Transactions on Electron Devices;1993-05
4. Historical overview of SIMOX;Vacuum;1991-01
5. Modification of a 100-mA-class high-current oxygen implanter and its application to ultrathin film MOSFET/SIMOX;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02
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