Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating-Reference-Cited by-同舟云学术

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Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating

Published:1986 Issue:15 Volume:22 Page:802
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Burkhard H.,Kuphal E.,Dinges H.W.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19860550?crawler=true&mimetype=application/pdf

Reference6 articles.

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of GaP pyramidal textured p–n junctions;Solid-State Electronics;1999-04

2. Liquid phase epitaxial growth of GaP layers on textured GaP (111)B substrates;Journal of Crystal Growth;1998-09

3. Threshold currents of 1.3-μm bulk, 1.55-μm bulk, and 1.55-μm MQW DFB P-substrate partially inverted buried heterostructure laser diodes;IEEE Journal of Quantum Electronics;1998-03

4. Large-Spot Laser Diodes with Stable Carrier Frequency by an External Fiber Grating;Integrated Photonics Research;1996

5. Tapered two-layer InGaAsP/InP waveguides for highly efficient chip coupling to single-mode fibers;Optics Communications;1995-04

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