Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20082925?crawler=true&mimetype=application/pdf
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1. A room temperature photovoltaic detector for the mid-infrared (1.8-3.4 m) wavelength region
2. Discovery of the tunnel diode
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