AlGaN/GaN HEMT on (111) single crystalline diamond-Reference-Cited by-同舟云学术

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AlGaN/GaN HEMT on (111) single crystalline diamond

Published:2010 Issue:4 Volume:46 Page:299
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Alomari M.,Dussaigne A.,Martin D.,Grandjean N.,Gaquière C.,Kohn E.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el.2010.2937?crawler=true&mimetype=application/pdf

Reference9 articles.

1. High RF output power for H-terminated diamond FETs

2. AlGaN/GaN HEMT on Diamond Technology Demonstration

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2. Device characterization of gallium nitride high electron mobility transistor with a boron nitride heat-spreading element;Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series;2023-07-09

3. Research Progress in Capping Diamond Growth on GaN HEMT: A Review;Crystals;2023-03-14

4. DC, AC and Breakdown Simulation of the Gallium Nitride High Electron Mobility Transistor with a Few-Layer Graphene Heat-Removal System;2022 International Conference on Advanced Technologies for Communications (ATC);2022-10-20

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