Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements-Reference-Cited by-同舟云学术

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Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

Published:2010 Issue:12 Volume:46 Page:863
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Bertling K.,Rakic A.D.,Yeow Y.T.,Brawley A.,Domyo H.,Rotella F.M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el.2010.0922?crawler=true&mimetype=application/pdf

Reference15 articles.

1. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling

2. A simple and analytical parameter-extraction method of a microwave MOSFET

3. Saijets, J.: ‘MOSFET RF characterization using bulk and SOI CMOS technologies’, 2007, Doctor of Science, Helsinki University of Technology, Espoo, Finland

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide;Scientific Reports;2017-10-16

2. Comparison of SOS MOSFET's Equivalent Circuit Parameters Extracted From $LCR$ Meter and VNA Measurement;IEEE Transactions on Electron Devices;2012-01

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